Picosecond photoconducting Hertzian dipoles
D. H. Auston, K. P. Cheung, and P. R. Smith
AT& T Bell Laboratories, Murray Hill, New Jersey 07974
(Received 14 March 1984; accepted for publication 18 May 1984)
Here they discuss in some detail the function of the photoconductive antenna used to generate subpicosecond pulses. They state that with the use of high repetition rate, subpicosecond pulses focused on a photoconductive antenna with patterned electrodes, charge carriers (electrons and holes) can be 'optically injected' into the material, creating a Hertzian dipole. A DC bias is applied across the electrodes, accelerating the carriers. The carriers then decay quickly because of trapping due to the high defect density in the material and radiate picosencond pulses. Inspired by the symmetry of Hertzian dipoles, a detector is fashioned just like the transmitter without the DC bias. A delay signal injects carriers (excites electrons from the valence band to the conduction band) in the detector and the transmitted THz pulse field propagates through the insulating material separating the photoconductors and acts as the detector's bias. The produced /induced photocurrent is measured using optical gating/sampling.
They define the transmitted radiation's field as
This paper brought up some important issues that I still have to look into such as polarization in both transmitted THz pulses and in the received signals, and the defect traps and how that relates to relaxation times and energy level of the carriers.
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